The Impact of Local Work Function Variations on Fermi Level Pinning of Organic Semiconductors
Identifieur interne : 000366 ( Main/Repository ); précédent : 000365; suivant : 000367The Impact of Local Work Function Variations on Fermi Level Pinning of Organic Semiconductors
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Abstract
This photoemission study shows that the work function (ϕ) of indium-tin-oxide (ITO) can be increased from 4.2 up to 6.5 eV upon the deposition of the molecular electron acceptors tetrafluoro-tetracyanoquinodimethane (F4TCNQ) and hexaazatriphenylene-hexacarbonitrile (HATCN). The evolution of sample ϕ and the hole injection barrier upon subsequent deposition of the hole transport material N,N'-bis(1-naphthyl)-NN'-diphenyl-1,1'-biphenyl-4,4'-diamine (α-NPD) was studied for different acceptor precoverages of ITO, corresponding to different initial ϕ values. When ϕ of the acceptor covered substrate exceeds a critical value ϕcrit, the highest occupied molecular level of multilayer α-NPD is found to be pinned 0.5 eV below the Fermi level (EF). Noteworthy, ϕcrit is found at 5.2 eV, which is 0.4 eV higher than expected for α-NPD (4.8 eV), and vacuum level alignment does not apply even before EF-pinning sets in. An electrostatic model that accounts for nonuniformity of the substrate at acceptor submonolayer coverages and the associated local work function changes explains the origin of "delayed" EF-pinning.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The Impact of Local Work Function Variations on Fermi Level Pinning of Organic Semiconductors</title><author><name sortKey="Winkler, Stefanie" uniqKey="Winkler S">Stefanie Winkler</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Strasse 15</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Humboldt-Universität zu Berlin, Institut für Physik</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Frisch, Johannes" uniqKey="Frisch J">Johannes Frisch</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Humboldt-Universität zu Berlin, Institut für Physik</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Schlesinger, Raphael" uniqKey="Schlesinger R">Raphael Schlesinger</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Humboldt-Universität zu Berlin, Institut für Physik</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Oehzelt, Martin" uniqKey="Oehzelt M">Martin Oehzelt</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Strasse 15</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Humboldt-Universität zu Berlin, Institut für Physik</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Rieger, Ralph" uniqKey="Rieger R">Ralph Rieger</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Max Planck Institute für Polymerforschung, Ackermannweg 10</s1><s2>55128 Mainz</s2><s3>DEU</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>55128 Mainz</wicri:noRegion><wicri:noRegion>Ackermannweg 10</wicri:noRegion><wicri:noRegion>55128 Mainz</wicri:noRegion></affiliation></author><author><name sortKey="R Der, Joachim" uniqKey="R Der J">Joachim R Der</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Max Planck Institute für Polymerforschung, Ackermannweg 10</s1><s2>55128 Mainz</s2><s3>DEU</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>55128 Mainz</wicri:noRegion><wicri:noRegion>Ackermannweg 10</wicri:noRegion><wicri:noRegion>55128 Mainz</wicri:noRegion></affiliation></author><author><name sortKey="Rabe, J Rgen P" uniqKey="Rabe J">J Rgen P. Rabe</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Humboldt-Universität zu Berlin, Institut für Physik</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="M Llen, Klaus" uniqKey="M Llen K">Klaus M Llen</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Max Planck Institute für Polymerforschung, Ackermannweg 10</s1><s2>55128 Mainz</s2><s3>DEU</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>55128 Mainz</wicri:noRegion><wicri:noRegion>Ackermannweg 10</wicri:noRegion><wicri:noRegion>55128 Mainz</wicri:noRegion></affiliation></author><author><name sortKey="Koch, Norbert" uniqKey="Koch N">Norbert Koch</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Strasse 15</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Humboldt-Universität zu Berlin, Institut für Physik</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0009431</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 14-0009431 INIST</idno><idno type="RBID">Pascal:14-0009431</idno><idno type="wicri:Area/Main/Corpus">000355</idno><idno type="wicri:Area/Main/Repository">000366</idno></publicationStmt><seriesStmt><idno type="ISSN">1932-7447</idno><title level="j" type="abbreviated">J. phys. chem., C</title><title level="j" type="main">Journal of physical chemistry. C</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Critical value</term><term>Diamine</term><term>Electronic structure</term><term>Electrostatics</term><term>Experimental design</term><term>Fermi level</term><term>Indium oxide</term><term>Multilayer</term><term>Multilayers</term><term>Organic semiconductors</term><term>Photoemission</term><term>Pinning</term><term>Tin oxide</term><term>Work functions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Travail sortie</term><term>Niveau Fermi</term><term>Structure électronique</term><term>Ancrage</term><term>Semiconducteur organique</term><term>Photoémission</term><term>Oxyde d'indium</term><term>Oxyde d'étain</term><term>Diamine</term><term>Valeur critique</term><term>Couche multimoléculaire</term><term>Plan expérience</term><term>Electrostatique</term><term>Multicouche</term><term>7330</term><term>7322</term><term>7960J</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This photoemission study shows that the work function (ϕ) of indium-tin-oxide (ITO) can be increased from 4.2 up to 6.5 eV upon the deposition of the molecular electron acceptors tetrafluoro-tetracyanoquinodimethane (F4TCNQ) and hexaazatriphenylene-hexacarbonitrile (HATCN). The evolution of sample ϕ and the hole injection barrier upon subsequent deposition of the hole transport material N,N'-bis(1-naphthyl)-NN'-diphenyl-1,1'-biphenyl-4,4'-diamine (α-NPD) was studied for different acceptor precoverages of ITO, corresponding to different initial ϕ values. When ϕ of the acceptor covered substrate exceeds a critical value ϕ<sub>crit</sub>, the highest occupied molecular level of multilayer α-NPD is found to be pinned 0.5 eV below the Fermi level (E<sub>F</sub>). Noteworthy, ϕ<sub>crit </sub>is found at 5.2 eV, which is 0.4 eV higher than expected for α-NPD (4.8 eV), and vacuum level alignment does not apply even before E<sub>F</sub>-pinning sets in. An electrostatic model that accounts for nonuniformity of the substrate at acceptor submonolayer coverages and the associated local work function changes explains the origin of "delayed" E<sub>F</sub>-pinning.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1932-7447</s0></fA01><fA03 i2="1"><s0>J. phys. chem., C</s0></fA03><fA05><s2>117</s2></fA05><fA06><s2>43</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The Impact of Local Work Function Variations on Fermi Level Pinning of Organic Semiconductors</s1></fA08><fA11 i1="01" i2="1"><s1>WINKLER (Stefanie)</s1></fA11><fA11 i1="02" i2="1"><s1>FRISCH (Johannes)</s1></fA11><fA11 i1="03" i2="1"><s1>SCHLESINGER (Raphael)</s1></fA11><fA11 i1="04" i2="1"><s1>OEHZELT (Martin)</s1></fA11><fA11 i1="05" i2="1"><s1>RIEGER (Ralph)</s1></fA11><fA11 i1="06" i2="1"><s1>RÄDER (Joachim)</s1></fA11><fA11 i1="07" i2="1"><s1>RABE (Jürgen P.)</s1></fA11><fA11 i1="08" i2="1"><s1>MÜLLEN (Klaus)</s1></fA11><fA11 i1="09" i2="1"><s1>KOCH (Norbert)</s1></fA11><fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Strasse 15</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Humboldt-Universität zu Berlin, Institut für Physik</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="03"><s1>Max Planck Institute für Polymerforschung, Ackermannweg 10</s1><s2>55128 Mainz</s2><s3>DEU</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>22285-22289</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>549C</s2><s5>354000504246890140</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0009431</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physical chemistry. C</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>This photoemission study shows that the work function (ϕ) of indium-tin-oxide (ITO) can be increased from 4.2 up to 6.5 eV upon the deposition of the molecular electron acceptors tetrafluoro-tetracyanoquinodimethane (F4TCNQ) and hexaazatriphenylene-hexacarbonitrile (HATCN). The evolution of sample ϕ and the hole injection barrier upon subsequent deposition of the hole transport material N,N'-bis(1-naphthyl)-NN'-diphenyl-1,1'-biphenyl-4,4'-diamine (α-NPD) was studied for different acceptor precoverages of ITO, corresponding to different initial ϕ values. When ϕ of the acceptor covered substrate exceeds a critical value ϕ<sub>crit</sub>, the highest occupied molecular level of multilayer α-NPD is found to be pinned 0.5 eV below the Fermi level (E<sub>F</sub>). Noteworthy, ϕ<sub>crit </sub>is found at 5.2 eV, which is 0.4 eV higher than expected for α-NPD (4.8 eV), and vacuum level alignment does not apply even before E<sub>F</sub>-pinning sets in. An electrostatic model that accounts for nonuniformity of the substrate at acceptor submonolayer coverages and the associated local work function changes explains the origin of "delayed" E<sub>F</sub>-pinning.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C30</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C22</s0></fC02><fC02 i1="03" i2="3"><s0>001B70I60J</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Travail sortie</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Work functions</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Niveau Fermi</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Fermi level</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Structure électronique</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Electronic structure</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Ancrage</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Pinning</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur organique</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Organic semiconductors</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Photoémission</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Photoemission</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Indium oxide</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Indio óxido</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Oxyde d'étain</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Tin oxide</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Estaño óxido</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Diamine</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Diamine</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Diamina</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Valeur critique</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Critical value</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Valor crítico</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Couche multimoléculaire</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Multilayer</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Capa multimolecular</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Plan expérience</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Experimental design</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Electrostatique</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Electrostatics</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Multicouche</s0><s5>15</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Multilayers</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>7330</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>7322</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>7960J</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>006</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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